HI5812JIBZ vs HI5812KIBZ 비교
다음의 상세 나란히 비교: HI5812JIBZ 제조: Renesas Electronics 및 HI5812KIBZ 제조: Renesas Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | HI5812JIBZ | HI5812KIBZ |
|---|---|---|
| 브랜드 | Renesas Electronics | Renesas Electronics |
| 카테고리 | ADC/DAC | ADC/DAC |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $3.18 | $7.05 |
| 분해능 | 12 bit | 12 bit |
| Architecture | SAR (Successive Approximation) with internal Track-and-Hold | CMOS, charge-redistribution SAR |
| Number of Channels | 1 single-ended input | 1 |
| Sample Rate | 50 kSPS (max) | — |
| Conversion Time | 20 us (typical) | 20 us |
| 입력 전압 범위 | 0 V to VREF (unipolar) | — |
| Reference Voltage (VREF) | [DATA_NEEDED: VREF max] | — |
| Integral Linearity Error (INL) | 1.5 LSB (max) | — |
| Analog Supply Voltage (VDD) | +5 V | — |
| Digital Interface | Parallel, user-selectable 12-bit / 8-bit MSB / 4-bit LSB | — |
| 출력 유형 | Three-state CMOS, latched across one full conversion | — |
| Control Inputs/Outputs | CONVERT_START (input), DATA_READY (flag) | — |
| Internal Clock | On-chip oscillator | — |
| Power Dissipation | 25 mW | — |
| 동작 온도 범위 | -40 C to +85 C | — |
| Package / Mounting | 24-pin SOIC (wide body), surface mount | — |
| Process Technology | High-speed CMOS with thin-film DAC | — |
| RoHS 상태 | Compliant | Compliant |
| Converter Type | — | SAR (Successive Approximation) |
| 샘플링 속도 | — | 50 ksps |
| 공급 전압 | — | 3 V to 6 V (single supply) |
| Supply Current (typical) | — | 1.9 mA |
| Input Type | — | Single-Ended |
| Track-and-Hold | — | Internal |
| Data Interface | — | Parallel (12-bit) |
| 패키지 | — | 24-SOIC (0.295 inch, 7.50 mm width) |
| 실장 유형 | — | Surface Mount |
| 동작 온도 | — | [DATA_NEEDED: operating temperature range] |
| Lead-Free | — | Yes |
| INL (typical) | — | [DATA_NEEDED: INL max in LSB] |
| DNL | — | [DATA_NEEDED: DNL max in LSB] |