IAUA180N04S5N012AUMA1 vs IAUC120N04S6N009ATMA1 对比

详细并排对比 IAUA180N04S5N012AUMA1 出自 Infineon 和 IAUC120N04S6N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUA180N04S5N012AUMA1 IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon

IAUA180N04S5N012AUMA1 ✓ 量产中
Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中

规格对比

参数 IAUA180N04S5N012AUMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.96 $1.60
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUA180N04S5N012AUMA1 —
Series OptiMOS-5 40 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 180 A (Tc) —
Maximum Power Dissipation (PD) 125 W (Tc) —
R_DS(on) (max) 1.2 mΩ at 10 V VGS —
Gate-Source Voltage (VGS) max ±20 V —
封装 PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 °C to +175 °C (Tj) —
Technology OptiMOS-5 Trench —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant —
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脉冲漏极电流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
工作结温 — -55 °C to +175 °C
MSL 等级 — 1
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

数据手册与资源

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