IAUC100N08S5N043ATMA1 vs IAUC50N08S5L096ATMA1 对比

详细并排对比 IAUC100N08S5N043ATMA1 出自 Infineon 和 IAUC50N08S5L096ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon

IAUC100N08S5N043ATMA1 ✓ 量产中
Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ 量产中

规格对比

参数 IAUC100N08S5N043ATMA1 IAUC50N08S5L096ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.72 $0.98
Manufacturer Infineon Technologies Infineon Technologies
Part Series IAUC / OptiMOS 5 —
晶体管类型 N-Channel MOSFET (Enhancement Mode) —
Maximum Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 100 A (package limited) —
Continuous Drain Current (chip-limited) 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W —
Maximum R<sub>DS(on)</sub> 4.3 mΩ —
Maximum Power Dissipation (P<sub>D</sub>) 125 W (T<sub>C</sub>) —
工作温度范围 -55°C to +175°C -55°C to +175°C
封装 PG-TDSON-8-34 (SuperSO8) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
湿敏等级(MSL) MSL1 (up to 260°C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Rating 100% Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology OptiMOS 5 (Trench) —
Channel Mode Enhancement —
Product Series — OptiMOS 5
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 50 A (Tc)
Pulsed Drain Current (IDM) — 200 A
On-Resistance (RDS(on)) — 9.6 mΩ max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) — 60 W (Tc)
RoHS 状态 — Compliant
Lead-Free — Yes
MSL 等级 — [DATA_NEEDED: MSL level]

数据手册与资源

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