IAUC120N04S6N009ATMA1 vs IAUA120N04S5N014AUMA1 对比

详细并排对比 IAUC120N04S6N009ATMA1 出自 Infineon 和 IAUA120N04S5N014AUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中
Infineon
IAUA120N04S5N014AUMA1 IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 - 40V 120A 1.4mΩ Automotive MOSFET | Infineon

IAUA120N04S5N014AUMA1 ✓ 量产中

规格对比

参数 IAUC120N04S6N009ATMA1 IAUA120N04S5N014AUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.60 $2.18
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40V —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 120 A —
脉冲漏极电流 [DATA_NEEDED: pulsed I_D value] —
R_DS(on) max @ V_GS=10V 0.9 mΩ —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: V_GS(th) typical value] —
Total Gate Charge Q_g typ [DATA_NEEDED: Q_g typical] —
Power Dissipation (Tc) 150 W —
Thermal Resistance R_thJC max 1.0 K/W —
工作结温 -55 °C to +175 °C —
封装 PG-TDSON-8-33 (5x6 mm) PG-HSOF-5-2 (sTOLL)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
MSL 等级 1 [DATA_NEEDED: MSL rating]
RoHS Compliant —
Lead-Free / Halogen-Free Yes (per Infineon product page) —
Part Number — IAUA120N04S5N014AUMA1
Series — OptiMOS™ 5
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (V<sub>DSS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C — 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V — 1.4 mΩ
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C — 136 W
工作温度范围 — -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet]
引脚数量 — 5 + Tab (6 effective)
Gate Drive — Enhancement Mode
RoHS 状态 — Compliant
Avalanche Rated — Yes (100% avalanche tested)

数据手册与资源

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