IAUC120N04S6N009ATMA1 vs IAUC100N10S5L040ATMA1 对比

详细并排对比 IAUC120N04S6N009ATMA1 出自 Infineon 和 IAUC100N10S5L040ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中
Infineon
IAUC100N10S5L040ATMA1 IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon

IAUC100N10S5L040ATMA1 ✓ 量产中

规格对比

参数 IAUC120N04S6N009ATMA1 IAUC100N10S5L040ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.60 $1.94
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40V OptiMOST 5 Power-Transistor (IAUC)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 120 A —
脉冲漏极电流 [DATA_NEEDED: pulsed I_D value] —
R_DS(on) max @ V_GS=10V 0.9 mΩ —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: V_GS(th) typical value] —
Total Gate Charge Q_g typ [DATA_NEEDED: Q_g typical] —
Power Dissipation (Tc) 150 W —
Thermal Resistance R_thJC max 1.0 K/W —
工作结温 -55 °C to +175 °C —
封装 PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
MSL 等级 1 —
RoHS Compliant —
Lead-Free / Halogen-Free Yes (per Infineon product page) —
晶体管类型 — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 400 A
On-State Resistance RDS(on) max — 4 mOhm
Gate Threshold Voltage VGS(th) — Logic Level
Continuous Power Dissipation (Tc) — 167 W
工作温度范围 — -55 C to +175 C (junction)
MSL Moisture Sensitivity — MSL1 (up to 260 C peak reflow)
Avalanche Tested — 100% production avalanche tested
AOI Compatibility — Feasible for automatic optical inspection

数据手册与资源

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