IAUC120N06S5L011ATMA1 vs IAUC100N04S6L025ATMA1 对比

详细并排对比 IAUC120N06S5L011ATMA1 出自 Infineon 和 IAUC100N04S6L025ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 ✓ 量产中
Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5L011ATMA1 IAUC100N04S6L025ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.10 $0.62
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 60 V (S5 generation) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DS) 60 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) 310 A (Tj), 120 A marketing —
R_DS(on) max [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] —
Power Dissipation (P_D) 188 W at T_C = 25 °C —
工作结温 -55 °C to +175 °C -55 C to +175 C
封装 PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) PG-TDSON-8 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Energy Rated Yes (EAS) —
Technology — OptiMOS 6 40V trench MOSFET
Polarity — N-Channel
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-State Resistance RDS(on) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Power Dissipation (PD) at TC=25C — 62 W
Lead-Free — Yes

数据手册与资源

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