IAUC120N06S5L011ATMA1 vs IAUC100N04S6L025ATMA1 비교
다음의 상세 나란히 비교: IAUC120N06S5L011ATMA1 제조: Infineon 및 IAUC100N04S6L025ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
IAUC120N06S5L011ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUC120N06S5L011ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.10 | $0.62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 60 V (S5 generation) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Gate-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS rating] | — |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing | — |
| R_DS(on) max | [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V] | — |
| Power Dissipation (P_D) | 188 W at T_C = 25 °C | — |
| 동작 접합 온도 | -55 °C to +175 °C | -55 C to +175 C |
| 패키지 | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (EAS) | — |
| Technology | — | OptiMOS 6 40V trench MOSFET |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Lead-Free | — | Yes |