IAUC120N06S5L015ATMA1 vs IAUC120N06S5N017ATMA1 对比

详细并排对比 IAUC120N06S5L015ATMA1 出自 Infineon 和 IAUC120N06S5N017ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中
Infineon
IAUC120N06S5N017ATMA1 IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon

IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon

IAUC120N06S5N017ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5L015ATMA1 IAUC120N06S5N017ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.92 $1.32
Technology N-Channel MOSFET (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
工作温度范围 -55C to +175C (Tj) -55°C to +175°C
封装 PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-43 (TDSON-8 EP)
安装类型 Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified —
Gate-Source Voltage (VGS) max ±20 V —
RoHS 状态 Compliant —
MSL 等级 [DATA_NEEDED: MSL level] MSL1 (260°C peak reflow)
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc=25°C) — 120 A
Pulsed Drain Current (IDM) — 757 A
RDS(on) at VGS=10V — 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.4 V (typ)
Total Gate Charge (Qg) at VGS=10V — 95.9 nC
Input Capacitance (Ciss) — 6.952 nF
Reverse Transfer Capacitance (Crss) — 84 pF
Output Capacitance (Coss) — 1.507 nF
Power Dissipation (PD, Tc=25°C) — 167 W
AEC-Q101 Qualification — Yes (Automotive Grade)
RoHS Compliance — Green Product (RoHS compliant)

数据手册与资源

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