IAUC120N06S5L015ATMA1 vs IAUC120N06S5N017ATMA1 비교
다음의 상세 나란히 비교: IAUC120N06S5L015ATMA1 제조: Infineon 및 IAUC120N06S5N017ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUC120N06S5L015ATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.92 | $1.32 |
| Technology | N-Channel MOSFET (OptiMOS 5) | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| 동작 온도 범위 | -55C to +175C (Tj) | -55°C to +175°C |
| 패키지 | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-43 (TDSON-8 EP) |
| 실장 유형 | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RoHS 상태 | Compliant | — |
| MSL 레벨 | [DATA_NEEDED: MSL level] | MSL1 (260°C peak reflow) |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A |
| Pulsed Drain Current (IDM) | — | 757 A |
| RDS(on) at VGS=10V | — | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 95.9 nC |
| Input Capacitance (Ciss) | — | 6.952 nF |
| Reverse Transfer Capacitance (Crss) | — | 84 pF |
| Output Capacitance (Coss) | — | 1.507 nF |
| Power Dissipation (PD, Tc=25°C) | — | 167 W |
| AEC-Q101 Qualification | — | Yes (Automotive Grade) |
| RoHS Compliance | — | Green Product (RoHS compliant) |