IAUC120N06S5N011ATMA1 vs IAUC120N04S6N010ATMA1 对比
详细并排对比 IAUC120N06S5N011ATMA1 出自 Infineon 和 IAUC120N04S6N010ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ 量产中
规格对比
| 参数 | IAUC120N06S5N011ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.68 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 120 A (Tc=25°C, Vgs=10V) | — |
| Pulsed Drain Current (Idm) | 310 A (Tj) | — |
| On-Resistance Rds(on) max | 1.1 mΩ at Vgs=10 V | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | — |
| Power Dissipation (Pd) | 188 W (Tc=25°C) | — |
| 工作温度范围 | -55°C to +175°C (Tj) | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| 封装 | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Technology | — | OptiMOS 6 |
| RoHS 状态 | — | Compliant |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |