IAUC120N06S5N011ATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N011ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N011ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 120 A (Tc=25Β°C, Vgs=10V) | β |
| Pulsed Drain Current (Idm) | 310 A (Tj) | β |
| On-Resistance Rds(on) max | 1.1 mΞ© at Vgs=10 V | β |
| Gate-Source Voltage (Vgs) max | Β±20 V | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total value] | β |
| Power Dissipation (Pd) | 188 W (Tc=25Β°C) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (Tj) | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant | β |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Technology | β | OptiMOS 6 |
| RoHS Status | β | Compliant |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |
| Polarity | β | Single N-channel |