IAUC120N06S5N022ATMA1 vs IAUC120N04S6N009ATMA1 对比

详细并排对比 IAUC120N06S5N022ATMA1 出自 Infineon 和 IAUC120N04S6N009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N022ATMA1 ✓ 量产中
Infineon
IAUC120N04S6N009ATMA1 IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 - 40V 120A 0.9mΩ OptiMOS 6 MOSFET | Infineon

IAUC120N04S6N009ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5N022ATMA1 IAUC120N04S6N009ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.68 $1.60
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) 170 A (Tj) —
On-Resistance RDS(on) max 2.2 mΩ at VGS=10 V —
Power Dissipation (PD) 136 W (Tc) —
工作温度范围 [DATA_NEEDED: TJ min/max] —
封装 PG-TDSON-8-34 (TDSON EP 5x6) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
Technology OptiMOS-5 trench —
Channel Type N-Channel —
引脚数量 8 (with exposed pad) —
Automotive Qualification AEC-Q101 AEC-Q101
RoHS 状态 Compliant —
无卤 Yes (per Infineon product family convention) —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg] —
RDS(on) at VGS=4.5V [DATA_NEEDED: RDS(on) @4.5V] —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 6 40V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
脉冲漏极电流 — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
工作结温 — -55 °C to +175 °C
MSL 等级 — 1
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

数据手册与资源

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