IAUC28N08S5L230ATMA1 vs IAUC120N04S6L012ATMA1 对比

详细并排对比 IAUC28N08S5L230ATMA1 出自 Infineon 和 IAUC120N04S6L012ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon

IAUC120N04S6L012ATMA1 ✓ 量产中

规格对比

参数 IAUC28N08S5L230ATMA1 IAUC120N04S6L012ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $1.21
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS-5 —
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) 28 A —
Pulsed Drain Current (I<sub>DM</sub>) [DATA_NEEDED: pulsed drain current] —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 23 mΩ (typ) —
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) 2.5 V —
Gate Charge (Q<sub>g</sub>, typ) [DATA_NEEDED: total gate charge] —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) 38 W —
工作结温 -55 °C to +175 °C —
封装 PG-TDSON-8-33 (5x6 mm SSO8) PG-TDSON-8 (TDSON-8, surface mount with exposed pad)
安装类型 Surface Mount Surface Mount
Technology OptiMOS-5 Power MOSFET —
Automotive Qualified Yes (AEC-Q101) —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Part Family — OptiMOS 6 40V
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC — 120 A
Pulsed Drain Current (IDM) — 480 A
On-State Resistance (RDS(on)) at 10V VGS — 1.2 mΩ (typ)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at 20V VGS]
Power Dissipation (PD) at TC — 115 W
工作温度范围 — -55 °C to +175 °C (junction)
Automotive Qualification — AEC-Q101 qualified
Delivery Form — Tape & Reel

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