IAUC41N06S5L100ATMA1 vs IPG20N06S4L14AATMA1 对比

详细并排对比 IAUC41N06S5L100ATMA1 出自 Infineon 和 IPG20N06S4L14AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC41N06S5L100ATMA1 IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon

IAUC41N06S5L100ATMA1 ✓ 量产中
Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ 量产中

规格对比

参数 IAUC41N06S5L100ATMA1 IPG20N06S4L14AATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.43 $0.82
Technology OptiMOS 5 (Trench MOSFET) OptiMOS™ Trench
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tj) 41 A —
Power Dissipation (PD, TC) 42 W —
On-State Resistance (RDS(on)) max 10 mOhm at VGS=10 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
工作温度范围 -55C to +175C -55°C to +175°C (junction)
封装 PG-TDSON-8-33 (TDSON-8, 5x6 mm) PG-TDSON-8-10 (Wettable Flank)
安装类型 Surface Mount Surface Mount
Channel Type N-Channel —
MSL 等级 [DATA_NEEDED: MSL rating] —
Automotive Qualified Yes (AEC-Q101 automotive grade) —
RoHS 状态 Compliant —
Interconnect Copper clip (low-inductance) —
Manufacturer — Infineon Technologies
Part Number — IPG20N06S4L14AATMA1
FET Type — 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) — 20 A (per channel)
Power Dissipation (PD) — 50 W
RDS(on) at VGS=10V — 13.7 mΩ typical
RDS(on) at VGS=4.5V — 14 mΩ typical
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive — Yes
Automotive Qualification — AEC-Q101
Peak Reflow Temperature — 260°C
Avalanche Tested — 100% (per datasheet)
RoHS Compliance — Green Product (RoHS compliant)
AOI Compatible — Yes (Wettable Flank)

数据手册与资源

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