IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
料号： IAUC41N06S5L100ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $0.74 | $0.74 |
| 10 | $0.66 | $6.60 |
| 100 | $0.58 | $58.00 |
| 500 | $0.51 | $255.00 |
| 1,000 | $0.47 | $470.00 |
| 5,000 | $0.43 | $2,150.00 |
IAUC41N06S5L100ATMA1 概述
An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied. It belongs to the broader family of power transistors, which includes IGBTs and BJTs; MOSFETs are favored where high switching speed and low gate-drive power are required. Within Infineon's portfolio this part uses OptiMOS 5 technology, a 60 V trench process that minimizes conduction loss and switching loss simultaneously, ranking it among the most efficient low-voltage MOSFET generations.
Key specifications include 60 V drain-source breakdown voltage (VDS), 41 A continuous drain current at junction, 42 W maximum power dissipation at case temperature, and 10 mOhm maximum on-state resistance (RDS(on)). The PG-TDSON-8-33 package uses copper clips instead of bond wires for higher current handling and lower parasitic inductance. The part is qualified for automotive use and supports fast-switching topologies where low Qg (gate charge) reduces driver losses.
The OptiMOS 5 process achieves the 10 mOhm RDS(on) at 10 V VGS through an optimized cell pitch and an advanced trench gate structure. The copper-clip interconnect replaces traditional aluminum bond wires, reducing source inductance and improving thermal performance. Combined, these features deliver the lowest figure-of-merit (FOM = RDS(on) x Qg) in Infineon's 60 V MOSFET lineup, enabling higher efficiency and smaller magnetics in switched-mode power supplies.
Typical applications include automotive LED lighting drivers, DC-DC converters in body control modules, motor control for small brushed and BLDC actuators, and reverse-polarity protection circuits. The part is particularly suited for high-frequency synchronous rectification where low switching loss matters more than absolute current capability.
When designing with this device, ensure that the gate-drive voltage reaches 10 V for full RDS(on) rating and that PCB layout minimizes source-inductance loop area. Pay close attention to avalanche energy (EAS) under inductive-load turn-off, and confirm heatsinking is adequate at sustained high drain currents where the 42 W power dissipation rating can be approached.
直接替换替代料： IAUC41N06S5L100ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUC41N06S5L100ATMA1 （相同外形与封装尺寸） ——差异在于 Technology, Package, Operating Temperature Range, FET Type, Drain-Source Voltage (VDS).
快速对比工具——选择替代料号进行并排对比：
IAUC41N06S5L100
✅ 直接替换📋 参考替代料（不在目录中）
IPG20N06S4L14AATMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →IAUCN10S7N021ATMA1
✅ 直接替换✓ 有现货
$2.05 / 个
查看数据手册 →ISC015N04NM5ATMA1
✅ 直接替换✓ 有现货
$0.98 / 个
查看数据手册 →BSP316PH6327XTSA1
✅ 直接替换✓ 有现货
$0.21 / 个
查看数据手册 →IPD90N06S407ATMA2
✅ 直接替换✓ 有现货
$0.84 / 个
查看数据手册 →IAUC41N06S5L100ATMA1 最大额定值与电气特性
| Technology | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tj) | 41 A |
| Power Dissipation (PD, TC) | 42 W |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V |
| 工作温度范围 | -55C to +175C |
| 封装 | PG-TDSON-8-33 (TDSON-8, 5x6 mm) |
| 安装类型 | Surface Mount |
| Channel Type | N-Channel |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) |
| RoHS 状态 | Compliant |
| Interconnect | Copper clip (low-inductance) |
IAUC41N06S5L100ATMA1 引脚配置
| 引脚 1 | Gate — MOSFET gate drive input |
| 引脚 2 | Source — Source (connected to exposed pad) |
| 引脚 3 | Source — Source (connected to exposed pad) |
| 引脚 4 | Source — Source (connected to exposed pad) |
| 引脚 5 | Source — Source (connected to exposed pad) |
| 引脚 6 | Source — Source (connected to exposed pad) |
| 引脚 7 | Source — Source (connected to exposed pad) |
| 引脚 8 | Drain — MOSFET drain (connected to exposed pad on some variants) |
安全工作区 - IAUC41N06S5L100ATMA1
典型应用
IAUC41N06S5L100ATMA1 适用于 6 应用s: Automotive LED Headlight Drivers, 12V/24V DC-DC Buck Converters, Brushed DC Motor Drive (H-Bridge), Reverse-Battery / Load-Dump Protection, Battery Management System (BMS) Protection, Power OR-ing and Hot-Swap Controllers.
Automotive LED Headlight Drivers
The IAUC41N06S5L100ATMA1's 60 V VDS, 41 A continuous current, and 10 mOhm RDS(on) make it ideal as the high-side switch in automotive LED headlight drivers and daytime running light modules. Its AEC-Q101 qualification supports body electronics and exterior lighting at 12 V or 24 V battery rails. The OptiMOS 5 process delivers low switching loss at the 100 kHz+ PWM frequencies used for dimming, while the copper-clip TDSON-8-33 package handles the inrush current that occurs at cold-start LED turn-on. Place the MOSFET with its exposed pad soldered to at least 1 sq cm of 2 oz copper to keep Tj within safe limits at full duty cycle.
推荐
12V/24V DC-DC Buck Converters
In synchronous buck converters for automotive body control modules and infotainment supplies, the IAUC41N06S5L100ATMA1 serves as the low-side synchronous rectifier with its 10 mOhm RDS(on) and copper-clip TDSON-8-33 package. The 41 A rating comfortably supports 10-15 A continuous load currents typical of POL converters. OptiMOS 5's low Qg reduces gate-driver losses at 200-500 kHz switching frequencies, and the 60 V VDS rating tolerates 24 V truck-bus transients plus inductive ringing. Use the part with a dedicated gate-driver such as 1EDB7275FXUMA1 to control switching-node dV/dt and minimize EMI.
推荐
Brushed DC Motor Drive (H-Bridge)
The IAUC41N06S5L100ATMA1 is well-suited for the low-side switches in a 4-MOSFET H-bridge driving automotive brushed DC motors such as window lifts, seat adjusters, and door-lock actuators. The 41 A continuous current supports motor inrush without thermal shutdown, and the 10 mOhm RDS(on) keeps conduction loss low across the PWM duty cycle at 20-25 kHz. The copper-clip package's low source inductance reduces voltage spikes during commutation, easing snubber requirements. For reverse-battery protection, pair with a P-channel high-side switch in a similar TDSON-8 package.
推荐
Reverse-Battery / Load-Dump Protection
Use the IAUC41N06S5L100ATMA1 as the high-side switch in reverse-battery and load-dump protection circuits for automotive ECUs. Its 60 V VDS rating tolerates load-dump transients up to ISO 7637-2 pulse 5a, while the 10 mOhm RDS(on) minimizes voltage drop on the 12 V supply rail feeding sensitive downstream ICs. The AEC-Q101 qualification meets automotive reliability requirements for body and chassis ECUs. Drive the gate from a charge-pump or bootstrap circuit referenced to the source, and add a TVS diode at the drain for clamping severe inductive transients.
推荐
Battery Management System (BMS) Protection
In 12 V lead-acid and 48 V mild-hybrid BMS protection FETs, the IAUC41N06S5L100ATMA1 functions as the charge/discharge control MOSFET. Its 41 A current rating matches typical pack-level currents for auxiliary batteries, and the 60 V VDS supports 48 V bus architectures with adequate transient margin. The OptiMOS 5 10 mOhm RDS(on) reduces I2R losses during continuous charge balancing, improving overall pack efficiency. The copper-clip TDSON-8-33 package spreads heat across the BMS PCB, enabling compact module designs without external heatsinks.
推荐
Power OR-ing and Hot-Swap Controllers
The IAUC41N06S5L100ATMA1's fast body-diode reverse recovery and 10 mOhm RDS(on) make it suitable as the OR-ing MOSFET in redundant automotive power architectures such as dual-battery or backup-supply systems. Its 60 V VDS tolerates transients on either rail during switchover events. Place two IAUC41N06S5L100ATMA1 MOSFETs back-to-back (sources tied) to block reverse current flow, then drive the gates with a comparator that detects reverse-voltage conditions. The TDSON-8-33 footprint simplifies thermal coupling to chassis ground planes in ECU enclosures.
推荐
推荐产品汇总
工程参考数据： IAUC41N06S5L100ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUC41N06S5L100 | IPG20N06S4L14AATMA1 | IAUCN10S7N021ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 100 V | 40 V |
| On-State Resistance RDS(on) max | 10 mOhm | 10 mOhm | 14 mOhm | 10 mOhm | 1.5 mOhm |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS | OptiMOS 5 | OptiMOS 5 |
| Automotive Qualified (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
关键差异点
- Lowest RDS(on) in Infineon's 60 V OptiMOS 5 TDSON-8 family （对比 IPG20N06S4L14AATMA1)
- Higher VDS rating than 40 V OptiMOS 5 alternatives （对比 ISC015N04NM5ATMA1)
- Drop-in compatible same-brand alternative without packaging suffix （对比 IAUC41N06S5L100)
设计说明
Estimated: At continuous 25 A load and 10 mOhm RDS(on), the IAUC41N06S5L100ATMA1 dissipates approximately 6.25 W (P = I^2 x R). With a TDSON-8-33 thermal resistance of roughly 50 C/W on a 2 oz copper 1 sq cm pad, junction temperature rises ~313 C above ambient - far above 175 C Tj max. Practical continuous current is therefore limited to roughly 15-20 A without forced cooling or larger copper area; verify against the manufacturer's thermal curve and derate per actual PCB layout.
Solder the TDSON-8-33 exposed thermal pad directly to a continuous copper pour of at least 1 sq cm on the top layer, with thermal vias to inner ground planes for improved heat spreading. Place the gate-drive loop (gate resistor, gate-source pull-down) as close to pins 1-7 as possible to minimize parasitic inductance. Keep the switching-node copper area small to limit radiated EMI, and route the drain (pin 8) directly to the load terminal with the widest practical trace.
Do not assume TDSON-8 packages from different vendors share the same pinout: Infineon places the gate on pin 1, but some competitors assign the gate to pin 4 or pin 8 in the same 5x6 mm outline. Always re-verify the pinout against the manufacturer's datasheet before substitution. Also confirm gate-drive voltage reaches 10 V; partial enhancement at VGS=4.5 V can increase RDS(on) by 2-3x and push the part into thermal runaway.
合规信息
AEC-Q101 qualified (automotive MOSFET standard, distinct from AEC-Q100 IC standard). RoHS and lead-free per Infineon product page.
