IAUC50N08S5L096ATMA1 vs IAUC80N04S6N036ATMA1 对比

详细并排对比 IAUC50N08S5L096ATMA1 出自 Infineon 和 IAUC80N04S6N036ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ 量产中
Infineon
IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 ✓ 量产中

规格对比

参数 IAUC50N08S5L096ATMA1 IAUC80N04S6N036ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.98 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
工作温度范围 -55°C to +175°C -55 C to +175 C
封装 PG-TDSON-8-33 (5x6 mm) PG-TDSON-8 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant —
Lead-Free Yes —
MSL 等级 [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Part Family — OptiMOS-6 40 V
Polarity — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Gate-Source Voltage (V_GS) — [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) at T_C — 80 A
Power Dissipation (P_D) at T_C — 50 W
On-Resistance R_DS(on) max at V_GS=10V — 3.6 mOhm
On-Resistance R_DS(on) max at V_GS=4.5V — [DATA_NEEDED: R_DS(on) at V_GS=4.5V]
AEC-Q101 Qualification — Qualified (Automotive)
Terminal Finish — Tin (Sn) (e3 per JESD-609)
Peak Reflow Temperature — 260 C (per JEDEC J-STD-020)
Compliance - RoHS — Compliant
Compliance - REACH — Compliant

数据手册与资源

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