IAUC50N08S5L096ATMA1 vs IAUC80N04S6N036ATMA1 Comparison
Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and IAUC80N04S6N036ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUC50N08S5L096ATMA1 | IAUC80N04S6N036ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| Operating Temperature Range | -55°C to +175°C | -55 C to +175 C |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Part Family | — | OptiMOS-6 40 V |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: max V_GS rating] |
| Continuous Drain Current (I_D) at T_C | — | 80 A |
| Power Dissipation (P_D) at T_C | — | 50 W |
| On-Resistance R_DS(on) max at V_GS=10V | — | 3.6 mOhm |
| On-Resistance R_DS(on) max at V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at V_GS=4.5V] |
| AEC-Q101 Qualification | — | Qualified (Automotive) |
| Terminal Finish | — | Tin (Sn) (e3 per JESD-609) |
| Peak Reflow Temperature | — | 260 C (per JEDEC J-STD-020) |
| Compliance - RoHS | — | Compliant |
| Compliance - REACH | — | Compliant |