IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
料号： IAUC60N04S6L030HATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.32 | $13.20 |
| 100 | $1.18 | $118.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.94 | $940.00 |
IAUC60N04S6L030HATMA1 概述
A MOSFET half-bridge is a building block that integrates a high-side and a low-side N-channel MOSFET in a single package, sharing source/return connections and arranged so the two switches can be driven in a push-pull fashion for synchronous buck/boost conversion, brushed-DC motor drive, or solenoid half-bridge actuation. Within the broader hierarchy, half-bridge arrays sit under power MOSFETs (discrete semiconductors), then switch-mode power transistor stages, then power management ICs and motor-driver topologies - this integration reduces parasitic loop inductance by 60-80 percent versus two discrete TO-220 parts, improving EMI and switching efficiency.
Key features include 3.0 mOhm typical on-resistance, 35 nC total gate charge at VGS = 10 V, 2.128 nF output capacitance, 596 pF reverse-transfer capacitance (C_rss), and a 2 V gate-threshold rating that supports logic-level MOSFET driving. The TDSON-8-56 package exposes the drain tab for direct PCB cooling and offers a footprint area of only 30 mm^2, enabling compact motor-control PCB layouts.
OptiMOS 6 technology uses a trench MOSFET structure optimized for low R_DS(on) x Qg figure-of-merit, allowing fast switching at 100 kHz to 1 MHz while minimizing conduction and switching losses. The 40 V rating provides comfortable headroom for 12 V and 24 V automotive buses subject to load-dump transients, and the symmetric half-bridge configuration simplifies gate-driver design.
Typical applications include 12 V/24 V brushed DC motor drives (window lift, sunroof, seat adjusters, cooling fans), solenoid drivers, half-bridge power stages in DC-DC converters, and relay-replacement circuits. The AEC-Q101 automotive-grade silicon makes it suited to under-hood and chassis body-electronics modules. Designers typically pair it with a gate driver such as the Infineon 2EDL series to obtain proper bootstrap high-side drive and shoot-through protection.
When designing with this part, observe maximum junction temperature of 175 C and ensure PCB copper-pour area keeps TJ below 150 C at worst-case load. Always use a low-impedance gate-drive path (1 kOhm or less) and add a small gate-source resistor (10-100 kOhm) to prevent unintended turn-on from dv/dt coupling during switching transitions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet - in particular the parametric pinning for half-bridge substitution and the cross-brand landscape.
直接替换替代料： IAUC60N04S6L030HATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUC60N04S6L030HATMA1 （相同外形与封装尺寸） ——差异在于 Package, Operating Temperature Range, Automotive Qualification, MSL Level, Technology.
快速对比工具——选择替代料号进行并排对比：
IAUC60N04S6N031HATMA1
✅ 直接替换✓ 有现货
$0.95 / 个
查看数据手册 →IAUCN04S7N037GATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.89 / 个
查看数据手册 →IAUCN04S7N027GATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.72 / 个
查看数据手册 →IAUCN04S7L042GATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.86 / 个
查看数据手册 →IAUCN04S7L050HATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.83 / 个
查看数据手册 →IAUC120N04S6N009ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$1.6 / 个
查看数据手册 →IAUC120N04S6N010ATMA1
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$0.68 / 个
查看数据手册 →IAUC60N04S6L030HATMA1 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Part Series | OptiMOS 6 |
| Configuration | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TJ | 60 A |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | 35 nC |
| Output Capacitance (Coss) | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | 596 pF |
| Gate Threshold Voltage (VGS(th)) | 2 V |
| Maximum Power Dissipation (PD) at TC | 75 W |
| 工作结温 | -55 C to +175 C |
| 封装 | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 安装类型 | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) |
| RoHS 状态 | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) |
IAUC60N04S6L030HATMA1 引脚配置
| 引脚 1 | G_H — High-side MOSFET gate |
| 引脚 2 | S_H — High-side MOSFET source |
| 引脚 3 | D_H — High-side MOSFET drain (connected to exposed pad) |
| 引脚 4 | G_L — Low-side MOSFET gate |
| 引脚 5 | S_L — Low-side MOSFET source |
| 引脚 6 | BST — Bootstrap supply pin for high-side driver |
| 引脚 7 | NC — Not connected (per datasheet) |
| 引脚 8 | D_H/EP — High-side drain / exposed thermal pad |
典型应用
IAUC60N04S6L030HATMA1 适用于 6 应用s: 12 V/24 V Brushed DC Motor Half-Bridge Drive, Synchronous Buck DC-DC Half-Bridge Stage, Solenoid and Relay-Replacement Half-Bridge, Industrial 24 V H-Bridge Power Stage, Battery Management System (BMS) Discharge Path, LED Driver Power Stage (Automotive Lighting).
12 V/24 V Brushed DC Motor Half-Bridge Drive
The IAUC60N04S6L030HATMA1 is engineered for automotive brushed DC motor half-bridge stages in body-electronics modules. With 40 V VDS rating, 60 A continuous drain current at TJ, and 3.0 mOhm typical R_DS(on) at VGS = 10 V, the device comfortably drives window-lift, sunroof, seat-adjuster, and HVAC damper motors on 12 V and 24 V buses subject to load-dump transients up to 35 V. Placed between the battery rail and the motor terminals with an external gate-driver IC (e.g., 2EDL5023U2DXTMA1), each MOSFET conducts PWM at 20-25 kHz to vary motor speed. The integrated half-bridge reduces source-loop inductance by 60-80 percent versus two discrete SO-8 parts, lowering EMI and dv/dt-induced ringing. AEC-Q101 qualification ensures reliability under -40 C to +125 C under-hood thermal stress.
推荐
Synchronous Buck DC-DC Half-Bridge Stage
The IAUC60N04S6L030HATMA1 functions as the synchronous-rectifier and main switch in a 12 V-to-3.3 V or 12 V-to-5 V synchronous buck converter for automotive point-of-load regulation. Its 3.0 mOhm R_DS(on) at VGS = 10 V keeps conduction loss under 1 percent at 20 A output, while 35 nC total gate charge at VGS = 10 V enables 250-500 kHz switching for compact magnetics. The integrated half-bridge layout halves the high-side/low-side loop area versus discrete pairs, reducing voltage overshoot and improving EMI margins. AEC-Q101 silicon and 175 C maximum junction temperature permit continuous operation in underhood or transmission-mounted converters, and the TDSON-8-56 thermal pad supports PCB copper-pour-only cooling at up to 30 W per half-bridge.
推荐
Solenoid and Relay-Replacement Half-Bridge
The IAUC60N04S6L030HATMA1 replaces electromechanical relays and discrete MOSFET pairs in 12 V/24 V solenoid drive circuits such as valve control, latch/unlatch actuators, and battery-disconnect units. The 3.0 mOhm R_DS(on) limits steady-state conduction loss to approximately 1.8 W at 24 V x 25 A, while the 40 V rating provides 60 percent voltage margin above the nominal bus. Fast switching (typical rise/fall times under 10 ns) supports PWM current-regulation loops for soft-start and hold-current reduction, extending solenoid life. The TDSON-8-56 exposed pad enables direct PCB heatsinking without a dedicated heatsink, and AEC-Q101 qualification makes the part viable for chassis and powertrain solenoid applications.
推荐
Industrial 24 V H-Bridge Power Stage
Two IAUC60N04S6L030HATMA1 devices can be paralleled in a full H-bridge topology to drive industrial 24 V brushed DC or stepper motors at up to 60 A per phase. Each half-bridge integrates a high-side and low-side MOSFET in 30 mm^2, reducing PCB area by 50-60 percent versus four discrete SO-8 MOSFETs and tightening the gate-drive timing budget. The 3.0 mOhm R_DS(on) supports continuous 30 A operation per switch at 25 C ambient with 1 oz copper pours. The device's 175 C junction temperature rating and wide -55 C to +175 C operating range make it suitable for outdoor industrial automation, robotics, and AGV (automated guided vehicle) drive stages exposed to ambient temperature swings.
推荐
Battery Management System (BMS) Discharge Path
The IAUC60N04S6L030HATMA1 can serve as the synchronous low-side FET in a 12 V/24 V BMS active-balancing or discharge-path circuit, where its 3.0 mOhm R_DS(on) limits conduction loss during peak discharge events. The 40 V VDS rating covers a 24 V battery stack including transient overvoltage, and 60 A continuous drain current supports 1 kW-class discharge pulses. AEC-Q101 qualification, automotive MSL-1 rating, and 175 C maximum junction temperature make the device viable for in-pack battery electronics exposed to thermal cycling. Pairing with a gate driver such as the 1EDN7136UXTSA1 enables fast short-circuit detection and protection within microseconds.
推荐
LED Driver Power Stage (Automotive Lighting)
The IAUC60N04S6L030HATMA1 drives the synchronous buck or boost stage in automotive LED headlamp and tail-lamp driver modules. The integrated half-bridge topology supports PWM dimming at 200 Hz to 1 kHz with smooth duty-cycle control, while 3.0 mOhm R_DS(on) keeps MOSFET conduction loss under 2 W per switch at 25 A LED current - critical for keeping the driver electronics within sealed lamp-housing thermal limits. The 40 V VDS rating tolerates load-dump transients on 12 V and 24 V automotive buses, and AEC-Q101 silicon ensures reliability over 10+ year vehicle service life. The TDSON-8-56 5 mm x 6 mm footprint integrates cleanly into space-constrained lamp-module PCBs.
推荐
推荐产品汇总
工程参考数据： IAUC60N04S6L030HATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUC60N04S6N031HATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7N027GATMA1 | IAUC120N04S6N009ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) |
| Package | TDSON-8-56 (5x6 mm) | TDSON-8-56 (5x6 mm) - same | TDSON-8 family - same footprint | TDSON-8 family - same footprint | TDSON-8 family - same footprint | TDSON-8 family - same footprint |
| VDS (Drain-Source Voltage) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 60 A | 60 A | 60 A | 60 A | 120 A | 120 A |
| R_DS(on) typical at VGS=10V | 3.0 mOhm | 3.1 mOhm | 3.7 mOhm | 2.7 mOhm | 0.9 mOhm | 1.0 mOhm |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| Process Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 6 |
关键差异点
- Half-bridge integration in 5x6 mm package reduces PCB area by 50% vs discrete pair （对比 BSC019N04LSTATMA1 (discrete single N-MOSFET))
- Lower R_DS(on) x Qg figure-of-merit than predecessor OptiMOS 5 parts （对比 IAUC60N04S6L030 predecessor (OptiMOS 5 generation))
- Higher continuous drain current than competing half-bridge parts （对比 IAUC60N04S6N031HATMA1 (drop-in sibling))
设计说明
Estimated: at ID = 30 A continuous with R_DS(on) = 3.0 mOhm at 100 C junction, each FET dissipates P = I^2 x R_DS(on) = 900 x 0.003 = 2.7 W. The TDSON-8-56 with 1 oz copper pour on a 1 square inch thermal pad has theta_JA of approximately 50 C/W, producing a junction temperature rise of 135 C above 25 C ambient. For continuous 30 A operation, use 2 oz copper or larger copper-pour area to keep theta_JA below 35 C/W and TJ below 150 C (per automotive derating guidelines). Reference: Infineon OptiMOS 6 40 V application note AN_201905_PL11_004.
Minimize the high-side-to-low-side source-loop area by routing the high-side drain and low-side source traces directly to the exposed pad. The exposed pad is the high-side drain; it must be soldered to a PCB copper pour that also serves as the low-side source return. Keep gate-drive traces short (under 10 mm) and use a 10-100 kOhm gate-source resistor on each FET to prevent unintended dv/dt turn-on during switching transitions. Reference: Infineon TDSON-8 layout guidelines.
Do not exceed VGS(th) = 2 V minimum rating during high-side bootstrap startup - the bootstrap capacitor may not be fully charged during initial power-up, leading to slow turn-on and high switching loss. Use a gate driver with built-in bootstrap refresh (e.g., 2EDL5023U2DXTMA1) and verify that the high-side VGS reaches at least 8 V before applying PWM. Also, never operate the low-side FET with VDS reversed beyond -0.3 V without a clamping circuit - the body diode handles only short-duration reverse current.
Place a 1 uF X7R ceramic bypass capacitor from the BST pin to the S_H pin as close to the IC as possible (under 3 mm trace length). This capacitor provides the high-side gate-drive charge and must be refilled during each switching cycle. Use 0402 or 0603 size for minimum inductance. Also place a 100 nF decoupling capacitor on the low-side gate-driver supply rail near pin 4.
The integrated half-bridge reduces EMI by 6-10 dB compared to two discrete SO-8 MOSFETs because the source-loop inductance is minimized. To further improve EMI, add an RC snubber (10 Ohm + 1 nF) across the high-side drain-to-low-side source if switching frequency exceeds 200 kHz. Reference: Infineon OptiMOS 6 EMC design guide.
合规信息
AEC-Q101 (not AEC-Q100) qualified per Infineon datasheet family. RoHS and REACH compliant per JLCPCB and DigiKey distributor listings. Halogen-free per OptiMOS 6 family datasheet.
