IAUC60N04S6L030HATMA1 vs IAUC120N04S6N010ATMA1 对比

详细并排对比 IAUC60N04S6L030HATMA1 出自 Infineon 和 IAUC120N04S6N010ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 量产中
Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ 量产中

规格对比

参数 IAUC60N04S6L030HATMA1 IAUC120N04S6N010ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.94 $0.68
Manufacturer Infineon Technologies —
Part Series OptiMOS 6 —
Configuration Half-Bridge (2 N-Channel) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TJ 60 A —
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) —
Total Gate Charge (Qg) at VGS=10V 35 nC —
Output Capacitance (Coss) 2.128 nF —
Reverse Transfer Capacitance (Crss) 596 pF —
Gate Threshold Voltage (VGS(th)) 2 V —
Maximum Power Dissipation (PD) at TC 75 W —
工作结温 -55 C to +175 C —
封装 PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-TDSON-8-34 (5x6 mm leadless)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) AEC-Q101
RoHS 状态 Compliant Compliant
MSL 等级 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, per Infineon TDSON family)
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Technology — OptiMOS 6
工作温度范围 — -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

数据手册与资源

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