IAUC60N04S6L030HATMA1 vs IAUC120N06S5N022ATMA1 对比
详细并排对比 IAUC60N04S6L030HATMA1 出自 Infineon 和 IAUC120N06S5N022ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ 量产中规格对比
| 参数 | IAUC60N04S6L030HATMA1 | IAUC120N06S5N022ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.94 | $1.68 |
| Manufacturer | Infineon Technologies | — |
| Part Series | OptiMOS 6 | — |
| Configuration | Half-Bridge (2 N-Channel) | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID) at TJ | 60 A | — |
| On-Resistance R_DS(on) at VGS=10V | 3.0 mOhm (typical) | — |
| Total Gate Charge (Qg) at VGS=10V | 35 nC | — |
| Output Capacitance (Coss) | 2.128 nF | — |
| Reverse Transfer Capacitance (Crss) | 596 pF | — |
| Gate Threshold Voltage (VGS(th)) | 2 V | — |
| Maximum Power Dissipation (PD) at TC | 75 W | — |
| 工作结温 | -55 C to +175 C | — |
| 封装 | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) | PG-TDSON-8-34 (TDSON EP 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per part number suffix) | AEC-Q101 |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | 170 A (Tj) |
| On-Resistance RDS(on) max | — | 2.2 mΩ at VGS=10 V |
| Power Dissipation (PD) | — | 136 W (Tc) |
| 工作温度范围 | — | [DATA_NEEDED: TJ min/max] |
| Technology | — | OptiMOS-5 trench |
| Channel Type | — | N-Channel |
| 引脚数量 | — | 8 (with exposed pad) |
| 无卤 | — | Yes (per Infineon product family convention) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) @4.5V] |