IAUC60N04S6L039ATMA1 vs BSC0504NSIATMA1 对比
详细并排对比 IAUC60N04S6L039ATMA1 出自 Infineon 和 BSC0504NSIATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUC60N04S6L039ATMA1 | BSC0504NSIATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.72 | $0.00 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25C) | 60 A | — |
| Pulsed Drain Current (I_DM) | 240 A | — |
| R_DS(on) max @ V_GS=10V | 3.9 milliohm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (P_D) | 42 W | — |
| 工作结温 | -55C to +175C | — |
| 封装 | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8-6 |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 状态 | Compliant | unknown |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| 晶体管类型 | — | N-channel MOSFET |
| Drain-to-Source Voltage | — | 30 V |
| Continuous Drain Current at Ta | — | 21 A |
| Continuous Drain Current at Tc | — | 72 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 30 W |
| Technology Family | — | OptiMOS 5 |
| 引脚数 | — | 8 pins |
| Exposed Pad | — | Yes, according to distributor package description |
| On-State Resistance | — | [DATA_NEEDED: on-state resistance] |
| Gate Charge | — | [DATA_NEEDED: gate charge] |
| 栅极阈值电压 | — | [DATA_NEEDED: gate threshold voltage] |
| 热阻 | — | [DATA_NEEDED: thermal resistance] |
| 工作温度范围 | — | [DATA_NEEDED: operating temperature range] |
| AEC-Q100 Qualification | — | [DATA_NEEDED: AEC-Q100 qualification] |
| Lead-Free Status | — | unknown |
| Halogen-Free Status | — | unknown |
| REACH Status | — | unknown |