IAUC60N04S6N031HATMA1 vs IAUC28N08S5L230ATMA1 对比

详细并排对比 IAUC60N04S6N031HATMA1 出自 Infineon 和 IAUC28N08S5L230ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC60N04S6N031HATMA1 IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 - 40V 60A Half-Bridge MOSFET | Infineon

IAUC60N04S6N031HATMA1 ✓ 量产中

规格对比

参数 IAUC60N04S6N031HATMA1 IAUC28N08S5L230ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.71
Manufacturer Infineon Technologies Infineon Technologies
Part Family IAUC (Integrated Automotive Half-Bridge) —
Process Technology OptiMOS 6 40V —
Configuration Half-Bridge (2 N-Channel MOSFETs) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Tj) 60 A —
Power Dissipation (P_D, Tc=25C) 75 W —
R_DS(on) at VGS=10V 3.1 mΩ —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max rating] —
工作温度范围 -55 °C to +175 °C (Tj) —
封装 PG-TDSON-8-56 (5 mm x 6 mm) PG-TDSON-8-33 (5x6 mm SSO8)
安装类型 Surface Mount Surface Mount
引脚数量 8 —
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Series — OptiMOS-5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
工作结温 — -55 °C to +175 °C
Technology — OptiMOS-5 Power MOSFET
Automotive Qualified — Yes (AEC-Q101)

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