IAUC64N08S5L075ATMA1 vs IAUZ40N08S5N100ATMA1 对比
详细并排对比 IAUC64N08S5L075ATMA1 出自 Infineon 和 IAUZ40N08S5N100ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ 量产中
规格对比
| 参数 | IAUC64N08S5L075ATMA1 | IAUZ40N08S5N100ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.58 | $0.71 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | OptiMOS-5 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | — |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| 引脚数 | 8 | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 40 A |
| Power Dissipation (PD, Tc=25°C) | — | 68 W |
| On-Resistance RDS(on) max | — | 10 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg typ | — | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | — | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | — | ±20 V |
| 工作温度范围 | — | -55 °C to +175 °C (TJ) |
| RoHS 状态 | — | Compliant |
| Channel Type | — | N-Channel |