IAUC80N04S6N036ATMA1 vs IAUC50N08S5L096ATMA1 对比

详细并排对比 IAUC80N04S6N036ATMA1 出自 Infineon 和 IAUC50N08S5L096ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 ✓ 量产中
Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ 量产中

规格对比

参数 IAUC80N04S6N036ATMA1 IAUC50N08S5L096ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $0.98
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS-6 40 V —
Polarity N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) at T_C 80 A —
Power Dissipation (P_D) at T_C 50 W —
On-Resistance R_DS(on) max at V_GS=10V 3.6 mOhm —
On-Resistance R_DS(on) max at V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
封装 PG-TDSON-8 (SuperSO8 5x6 mm) PG-TDSON-8-33 (5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55 C to +175 C -55°C to +175°C
AEC-Q101 Qualification Qualified (Automotive) —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Terminal Finish Tin (Sn) (e3 per JESD-609) —
Peak Reflow Temperature 260 C (per JEDEC J-STD-020) —
Compliance - RoHS Compliant —
Compliance - REACH Compliant —
Product Series — OptiMOS 5
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 50 A (Tc)
Pulsed Drain Current (IDM) — 200 A
On-Resistance (RDS(on)) — 9.6 mΩ max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) — 60 W (Tc)
Automotive Qualification — AEC-Q101
RoHS 状态 — Compliant
Lead-Free — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价