IAUC80N04S6N036ATMA1 vs IAUC50N08S5L096ATMA1 비교

다음의 상세 나란히 비교: IAUC80N04S6N036ATMA1 제조: Infineon 및 IAUC50N08S5L096ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IAUC80N04S6N036ATMA1 IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon

IAUC80N04S6N036ATMA1 ✓ 활성
Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ 활성

사양 비교

파라미터 IAUC80N04S6N036ATMA1 IAUC50N08S5L096ATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.86 $0.98
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS-6 40 V —
Polarity N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) at T_C 80 A —
Power Dissipation (P_D) at T_C 50 W —
On-Resistance R_DS(on) max at V_GS=10V 3.6 mOhm —
On-Resistance R_DS(on) max at V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
패키지 PG-TDSON-8 (SuperSO8 5x6 mm) PG-TDSON-8-33 (5x6 mm)
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55 C to +175 C -55°C to +175°C
AEC-Q101 Qualification Qualified (Automotive) —
MSL 레벨 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Terminal Finish Tin (Sn) (e3 per JESD-609) —
Peak Reflow Temperature 260 C (per JEDEC J-STD-020) —
Compliance - RoHS Compliant —
Compliance - REACH Compliant —
Product Series — OptiMOS 5
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) — 50 A (Tc)
Pulsed Drain Current (IDM) — 200 A
On-Resistance (RDS(on)) — 9.6 mΩ max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) — 60 W (Tc)
Automotive Qualification — AEC-Q101
RoHS 상태 — Compliant
Lead-Free — Yes

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