IAUCN04S6N013TATMA1 vs IAUCN04S7L042GATMA1 对比

详细并排对比 IAUCN04S6N013TATMA1 出自 Infineon 和 IAUCN04S7L042GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S6N013TATMA1 IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon

IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon

IAUCN04S6N013TATMA1 ✓ 量产中

规格对比

参数 IAUCN04S6N013TATMA1 IAUCN04S7L042GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.66 $0.86
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 230 A at T<sub>C</sub> —
R<sub>DS(on)</sub> (max) 1.32 mΩ at V<sub>GS</sub> = 10 V —
Power Dissipation (P<sub>D</sub>) 133 W at T<sub>C</sub> —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 2.6 V (typ) —
Total Gate Charge (Q<sub>g</sub>) 52 nC at V<sub>GS</sub> = 10 V —
Input Capacitance (C<sub>iss</sub>) 1.08 nF —
Output Capacitance (C<sub>oss</sub>) 3.7 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 51 pF —
工作结温 -55 °C to +175 °C —
封装 PG-LHDSO-10-1 (SSO10T) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
安装类型 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Automotive Qualification AEC-Q101 —
RoHS 状态 Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 40V
Technology — Trench N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
工作温度范围 — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
MSL 等级 — 1
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

数据手册与资源

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