IAUCN04S7L006ATMA1 vs IAUCN08S7N034ATMA1 对比

详细并排对比 IAUCN04S7L006ATMA1 出自 Infineon 和 IAUCN08S7N034ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ 量产中
Infineon
IAUCN08S7N034ATMA1 IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon

IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon

IAUCN08S7N034ATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7L006ATMA1 IAUCN08S7N034ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.38 $1.48
FET Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
工作温度范围 -55 °C to +175 °C —
封装 PG-TDSON-8-43 PG-TDSON-8-34 (TDSON EP)
安装类型 Surface Mount Surface Mount
Technology OptiMOS-7 trench —
Automotive Qualified Yes (AEC-Q101) —
RoHS 状态 Compliant Compliant
引脚数量 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS™ 7
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 120 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 3.4 mΩ
Gate-Source Threshold (V<sub>GS(th)</sub>) — 3.2 V (typ)
Total Gate Charge (Q<sub>G</sub>) — 45.8 nC @ V<sub>GS</sub>=10 V
Input Capacitance (C<sub>iss</sub>) — 1.27 nF
Output Capacitance (C<sub>oss</sub>) — 3.115 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 23 pF
Power Dissipation (P<sub>D</sub>) — 118 W
工作结温 — -55°C to +175°C
MSL 等级 — MSL 1 (unlimited floor life)
Automotive Qualification — AEC-Q101

数据手册与资源

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