IAUCN04S7L006ATMA1 vs IAUCN08S7N034ATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7L006ATMA1 by Infineon and IAUCN08S7N034ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Active

Specification Comparison

Parameter IAUCN04S7L006ATMA1 IAUCN08S7N034ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Operating Temperature Range -55 °C to +175 °C —
Package PG-TDSON-8-43 PG-TDSON-8-34 (TDSON EP)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS-7 trench —
Automotive Qualified Yes (AEC-Q101) —
RoHS Status Compliant Compliant
Pin Count 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS™ 7
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 120 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 3.4 mΩ
Gate-Source Threshold (V<sub>GS(th)</sub>) — 3.2 V (typ)
Total Gate Charge (Q<sub>G</sub>) — 45.8 nC @ V<sub>GS</sub>=10 V
Input Capacitance (C<sub>iss</sub>) — 1.27 nF
Output Capacitance (C<sub>oss</sub>) — 3.115 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 23 pF
Power Dissipation (P<sub>D</sub>) — 118 W
Operating Junction Temperature — -55°C to +175°C
MSL Level — MSL 1 (unlimited floor life)
Automotive Qualification — AEC-Q101

Datasheets & Resources

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