IAUCN04S7N006TATMA1 vs IAUCN04S7N037GATMA1 对比
详细并排对比 IAUCN04S7N006TATMA1 出自 Infineon 和 IAUCN04S7N037GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N006TATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.66 | $0.89 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_j) | 425 A | — |
| Power Dissipation (P_D, T_C) | 205 W | — |
| R_DS(on) (typ, V_GS=10V) | 0.63 mΩ | — |
| Technology | OptiMOS 7 (shielded-gate trench) | Trench MOSFET, N-Channel |
| 封装 | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| 安装类型 | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| 工作温度范围 | [DATA_NEEDED: Tj min/max] | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G at V_GS=10V] | — |
| Automotive Grade | Yes (Infineon automotive MOSFET line) | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Automotive Qualification | — | AEC-Q101 |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |