IAUCN04S7N009ATMA1 vs BSC123N08NS3GATMA1 对比
详细并排对比 IAUCN04S7N009ATMA1 出自 Infineon 和 BSC123N08NS3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N009ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.55 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain-to-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D) | 175 A | — |
| R_DS(on) Max @ V_GS = 10 V | 0.96 mΩ | — |
| Gate Drive Voltage (V_GS) | 10 V | — |
| 封装 | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55C to +175C | — |
| Qualification | AEC-Q101 (Automotive) | — |
| MSL 等级 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant with exemption |
| Configuration | Single N-Channel | Single with built-in body diode |
| Supplier Device Package | PG-TDSON-8-34 | — |
| Part Family | — | OptiMOS 3 |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | — | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | — | 11 A |
| Maximum Pulsed Drain Current | — | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | — | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | — | 66 W |
| Power Dissipation (Ta) | — | 2.5 W |
| 工作结温 | — | -55C to +150C |
| Automotive Qualified | — | Yes (AEC-Q101) |