IAUCN04S7N015GATMA1 vs IAUCN04S7N027GATMA1 对比

详细并排对比 IAUCN04S7N015GATMA1 出自 Infineon 和 IAUCN04S7N027GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ 量产中
Infineon
IAUCN04S7N027GATMA1 IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 ✓ 量产中

规格对比

参数 IAUCN04S7N015GATMA1 IAUCN04S7N027GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.21 $0.72
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 7
Channel Type N-Channel N-Channel
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 165 A (Tc) —
Power Dissipation (P_D) 96 W (Tc) —
R_DS(on) max 1.53 mΩ at V_GS=10 V —
Gate-Source Voltage (V_GS) max [DATA_NEEDED: V_GS max] —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
封装 PG-THSOG-4-1 (SSO4G 5x6) surface mount —
工作结温 -55C to +175C —
Automotive Qualification AEC-Q101 qualified —
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
RoHS 状态 Compliant Compliant
安装类型 Surface Mount (IMS-compatible source-down) Surface Mount
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL]
Drain-Source Voltage (Vds max) — 40 V
Continuous Drain Current (Id) — 117 A
On-Resistance (Rds(on) max) — 2.67 mOhm
Power Dissipation (Pd) — 70 W (Tc)
封装 / 外壳 — PG-THSOG-4-1 (SSO4G 5x6)
Qualification — Automotive
工作温度范围 — [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Gate-Source Voltage Max (Vgs) — [DATA_NEEDED: Vgs max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Substrate Compatibility — IMS substrates and legacy FR-4

数据手册与资源

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