IAUCN04S7N037GATMA1 vs IAUC60N04S6L030HATMA1 对比
详细并排对比 IAUCN04S7N037GATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN04S7N037GATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Technology | Trench MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| 封装 | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 安装类型 | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| 工作温度范围 | [DATA_NEEDED: junction/ambient temperature limits] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | 2 V |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| 工作结温 | — | -55 C to +175 C |