IAUCN04S7N037GATMA1 vs IAUCN04S7L009ATMA1 对比
详细并排对比 IAUCN04S7N037GATMA1 出自 Infineon 和 IAUCN04S7L009ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN04S7N037GATMA1 | IAUCN04S7L009ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Technology | Trench MOSFET, N-Channel | OptiMOS™ 7 (trench-gate) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| 封装 | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-TDSON-8-34 (TDSON EP) |
| 安装类型 | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| 工作温度范围 | [DATA_NEEDED: junction/ambient temperature limits] | -55 °C to +175 °C (Tj) |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Part Number | — | IAUCN04S7L009ATMA1 |
| 晶体管类型 | — | N-Channel MOSFET |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id, Tc=25°C) | — | 275 A (Tj) |
| Continuous Drain Current (Id, Tc=100°C) | — | 175 A |
| Power Dissipation (Pd, Tc=25°C) | — | 129 W |
| Rds(on) Max @ Vgs=10V | — | 0.91 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |