IAUCN08S7L033ATMA1 vs BSC005N03LS5IATMA1 对比

详细并排对比 IAUCN08S7L033ATMA1 出自 Infineon 和 BSC005N03LS5IATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7L033ATMA1 IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L033ATMA1 ✓ 量产中
Infineon
BSC005N03LS5IATMA1 BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7L033ATMA1 BSC005N03LS5IATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.86 $1.32
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 80 V —
Maximum On-Resistance (RDS(on)) at VGS=10V 3.3 mΩ —
Continuous Drain Current (ID) at Tj 130 A —
Continuous Drain Current (ID) at Tc=25°C [DATA_NEEDED: ID at Tc=25C] —
Power Dissipation (PD) at Tc=25°C 118 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Gate-Source Voltage (VGS) max ±20 V (typical Infineon OptiMOS 7 limit) —
工作温度范围 -55°C to +175°C (TJ) —
封装 PG-TDSON-8-34 (SSO8, 5x6 mm²) PG-TDSON-8 FL (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
Qualification Automotive Grade (per Infineon datasheet header) —
Technology OptiMOS 7 trench MOSFET OptiMOS 5 (N-channel trench MOSFET)
RoHS 状态 Compliant Compliant (per LCSC listing)
MSL 等级 1 (per JEDEC J-STD-020, typical for this package) [DATA_NEEDED: MSL rating]
Part Number — BSC005N03LS5IATMA1
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at Ta — 42 A
Continuous Drain Current (ID) at Tc — 433 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max — 0.55 mΩ at VGS = 10 V, ID = 50 A
Gate-Source Threshold Voltage VGS(th) — 2 V (typ) at VGS = 10 mA
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 188 W
工作结温 — -55 °C to +175 °C
Polarity — N-Channel

数据手册与资源

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