IAUCN08S7L033ATMA1 vs BSC005N03LS5IATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and BSC005N03LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β Active
Specification Comparison
| Parameter | IAUCN08S7L033ATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΞ© | β |
| Continuous Drain Current (ID) at Tj | 130 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | [DATA_NEEDED: ID at Tc=25C] | β |
| Power Dissipation (PD) at Tc=25Β°C | 118 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage (VGS) max | Β±20 V (typical Infineon OptiMOS 7 limit) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | β |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | β |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) | [DATA_NEEDED: MSL rating] |
| Part Number | β | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 42 A |
| Continuous Drain Current (ID) at Tc | β | 433 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | β | 0.55 mΞ© at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | β | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 188 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Polarity | β | N-Channel |