IAUCN08S7N024ATMA1 vs IAUZ30N08S5N186ATMA1 对比

详细并排对比 IAUCN08S7N024ATMA1 出自 Infineon 和 IAUZ30N08S5N186ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 ✓ 量产中
Infineon
IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N08S5N186ATMA1 ✓ 量产中

规格对比

参数 IAUCN08S7N024ATMA1 IAUZ30N08S5N186ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.48
Manufacturer Infineon Technologies —
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical/min/max]
Technology OptiMOS 7 trench OptiMOS 5 N-Channel Power MOSFET (trench)
封装 PG-TDSON-8-34 (8-pin, exposed pad) PG-TSDSON-8-32 (5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +175C (typical automotive) -55 °C to +175 °C (automotive)
功耗(Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Continuous Drain Current (ID, Tj) — 30 A
Power Dissipation (PD, Tc) — 41 W
On-State Resistance (RDS(on)) — 18.6 mΩ (typical, VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
RoHS 状态 — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

数据手册与资源

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