IAUCN10S7L290TATMA1 vs IAUZ40N10S5N130ATMA1 对比
详细并排对比 IAUCN10S7L290TATMA1 出自 Infineon 和 IAUZ40N10S5N130ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUZ40N10S5N130ATMA1 - 100V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N10S5N130ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN10S7L290TATMA1 | IAUZ40N10S5N130ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.36 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | — |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | 160 A |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| MSL 等级 | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Part Number | — | IAUZ40N10S5N130ATMA1 |
| Technology | — | OptiMOS 5 (super-junction trench) |
| Continuous Drain Current (ID) at Tc=25°C | — | 40 A |
| RDS(on) max at VGS=10V | — | 13 mΩ |
| RDS(on) typical | — | 10 mΩ |
| Maximum Power Dissipation (Tc) | — | 68 W |
| 工作温度范围 | — | -55°C to +175°C (TJ) |
| Lead-Free / RoHS | — | ROHS3 Compliant |