IAUCN10S7N021ATMA1 vs IAUC41N06S5L100ATMA1 对比
详细并排对比 IAUCN10S7N021ATMA1 出自 Infineon 和 IAUC41N06S5L100ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN10S7N021ATMA1 | IAUC41N06S5L100ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.05 | $0.43 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | — |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8-33 (TDSON-8, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 状态 | Compliant | Compliant |
| Continuous Drain Current (ID, Tj) | — | 41 A |
| Power Dissipation (PD, TC) | — | 42 W |
| On-State Resistance (RDS(on)) max | — | 10 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| 工作温度范围 | — | -55C to +175C |
| Channel Type | — | N-Channel |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Automotive Qualified | — | Yes (AEC-Q101 automotive grade) |
| Interconnect | — | Copper clip (low-inductance) |