IAUCN10S7N074ATMA1 vs IAUC120N06S5L015ATMA1 对比
详细并排对比 IAUCN10S7N074ATMA1 出自 Infineon 和 IAUC120N06S5L015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
IAUCN10S7N074ATMA1 ✓ 量产中Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ 量产中规格对比
| 参数 | IAUCN10S7N074ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.62 | $0.92 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) | — |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) | — |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| 工作温度范围 | -55 °C to +175 °C | -55C to +175C (Tj) |
| 封装 | PG-TDSON-8-34 (TDSON EP, 5x6 mm) | PG-TDSON-8-43 (Surface Mount) |
| 安装类型 | Surface Mount | Surface Mount (exposed pad) |
| 引脚数量 | 8 (with exposed pad) | — |
| MSL 等级 | MSL2 (1 year) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Application | 48 V Automotive Systems | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |