IAUT300N08S5N011ATMA1 vs IAUC100N04S6L014ATMA1 对比

详细并排对比 IAUT300N08S5N011ATMA1 出自 Infineon 和 IAUC100N04S6L014ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 ✓ 量产中
Infineon
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 ✓ 量产中

规格对比

参数 IAUT300N08S5N011ATMA1 IAUC100N04S6L014ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.40 $0.72
FET Type N-Channel —
Technology OptiMOS 5 (trench MOSFET) OptiMOS 6
Drain-Source Voltage (V_DS) 80 V 40 V
Continuous Drain Current (I_D, T_C=25C) 300 A —
Pulsed Drain Current (I_DM) 410 A (Tj) [DATA_NEEDED: pulsed drain current]
R_DS(on) max 1.10 mOhm at V_GS=10 V —
Gate Threshold Voltage (V_GS(th)) 3.8 V [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_g) 231 nC at V_GS=10 V —
Input Capacitance (C_iss) 16.25 nF —
Output Capacitance (C_oss) 2.6 nF —
Reverse Transfer Capacitance (C_rss) 130 pF —
Power Dissipation (P_D) 375 W at T_C=25C —
工作温度范围 -55C to +175C -55C to +175C
封装 PG-HSOF-8-1 (TOLL 10x12 mm) PG-TDSON-8 (SuperSO8, 5x6 mm)
安装类型 Surface Mount Surface Mount
MSL 等级 1 1
Qualification Automotive (AEC-Q101) —
Manufacturer — Infineon Technologies
Part Family — IAUC / OptiMOS 6 40V
晶体管类型 — N-Channel MOSFET
Mode — Enhancement
Continuous Drain Current (I_D, Tc) — 100 A
R_DS(on) max (V_GS=10V) — 1.4 mOhm
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G typical]
Power Dissipation (P_D, Tc) — 100 W
AEC-Q101 Qualification — Yes
RoHS 状态 — Compliant
Packaging — Tape & Reel (ATMA1 suffix)

数据手册与资源

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