IAUT300N08S5N011ATMA1 vs IAUS300N08S5N011TATMA1 对比

详细并排对比 IAUT300N08S5N011ATMA1 出自 Infineon 和 IAUS300N08S5N011TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUT300N08S5N011ATMA1 IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET

IAUT300N08S5N011ATMA1 ✓ 量产中
Infineon
IAUS300N08S5N011TATMA1 IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon

IAUS300N08S5N011TATMA1 - 80V 300A 1.1mOhm OptiMOS-5 MOSFET | Infineon

IAUS300N08S5N011TATMA1 ✓ 量产中

规格对比

参数 IAUT300N08S5N011ATMA1 IAUS300N08S5N011TATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $5.40 $2.65
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench MOSFET) OptiMOS-5 (trench MOSFET)
Drain-Source Voltage (V_DS) 80 V 80 V
Continuous Drain Current (I_D, T_C=25C) 300 A —
Pulsed Drain Current (I_DM) 410 A (Tj) —
R_DS(on) max 1.10 mOhm at V_GS=10 V —
Gate Threshold Voltage (V_GS(th)) 3.8 V 3 V (max)
Total Gate Charge (Q_g) 231 nC at V_GS=10 V —
Input Capacitance (C_iss) 16.25 nF —
Output Capacitance (C_oss) 2.6 nF —
Reverse Transfer Capacitance (C_rss) 130 pF —
Power Dissipation (P_D) 375 W at T_C=25C —
工作温度范围 -55C to +175C -55 C to +175 C (Tj)
封装 PG-HSOF-8-1 (TOLL 10x12 mm) PG-HDSOP-16-2 (HDSOP-16)
安装类型 Surface Mount Surface Mount
MSL 等级 1 —
Qualification Automotive (AEC-Q101) —
Continuous Drain Current (I_D, Tj) — 300 A
Power Dissipation (P_D, Tc) — 375 W
R_DS(on) Max @ V_GS=10V — 1.1 mOhm
Total Gate Charge (Q_G) @ 10V — 231 nC
Output Capacitance (C_OSS) — 130 pF (typ)
Reverse Transfer Capacitance (C_RSS) — 16.25 nF (typ)
Number of Channels — 1
RoHS 状态 — Compliant
Automotive Qualified — Yes (Infineon automotive part)

数据手册与资源

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