IAUT300N08S5N012ATMA2 vs IAUCN10S7N021ATMA1 对比
详细并排对比 IAUT300N08S5N012ATMA2 出自 Infineon 和 IAUCN10S7N021ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 量产中规格对比
| 参数 | IAUT300N08S5N012ATMA2 | IAUCN10S7N021ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.20 | $2.05 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™-5 80 V | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | [DATA_NEEDED: pulsed drain current IDM] |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| 工作温度范围 | -55 °C to +175 °C (TJ) | — |
| 封装 | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| 安装类型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| MSL 等级 | [DATA_NEEDED: MSL level] | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS™ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 175 A |
| RDS(on) max @ VGS=10 V | — | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | — | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | — | 105 nC |
| Input Capacitance (Ciss) | — | 2.98 nF |
| Output Capacitance (Coss) | — | 32 pF |
| Reverse Transfer Capacitance (Crss) | — | 7.153 nF |
| Power Dissipation (Pd) @ Tc | — | 217 W |
| 工作结温 | — | -55 °C to +175 °C |
| Qualification | — | AEC-Q101 (Automotive) |
| RoHS 状态 | — | Compliant |