IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
料号： IAUT300N08S5N012ATMA2 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $4.14 | $4.14 |
| 10 | $3.72 | $37.20 |
| 100 | $3.1 | $310.00 |
| 500 | $2.65 | $1,325.00 |
| 1,000 | $2.2 | $2,200.00 |
IAUT300N08S5N012ATMA2 概述
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently route high currents in power conversion circuits. It belongs to the broader hierarchy of discrete semiconductors, sitting between passive components and ICs in modern electronics, and is the foundational building block of synchronous buck converters, motor drives, and load switches in 12 V / 24 V / 48 V automotive systems. Unlike a relay or bipolar transistor, the MOSFET gates are driven entirely by voltage, requiring near-zero drive current and enabling MHz-class switching frequencies.
Key features of this part include the OptiMOS™-5 80 V technology platform, AEC-Q101 automotive qualification, a continuous drain current of 300 A at 25 °C case temperature, pulsed current handling above 1200 A, and a maximum power dissipation of 375 W (Tc). The PG-HSOF-8-1 package exposes the drain tab as a large thermal pad, yielding junction-to-case thermal resistance values that support very high transient current loads. Logic-level compatibility is not specified - the standard gate drive is 10 V VGS, which suits 12 V automotive supply rails after a charge-pump or gate-driver stage.
The device is intended for high-current synchronous rectification, battery protection, and motor-control switching in mild-hybrid (48 V) and conventional 12 V automotive power nets. Its 1.2 mΩ R<sub>DS(on)</sub> minimizes conduction loss, while the robust avalanche rating and dv/dt capability ensure reliable switching under harsh transients. The optimized internal cell structure also reduces gate charge (Qg) for fast switching transitions.
Typical applications include 12 V/48 V automotive load switches, electric power steering (EPS) inverter stages, brake-by-wire and electro-mechanical braking modules, DC-DC converter synchronous rectifiers, and battery disconnect switches in mild-hybrid electric vehicles. The automotive-grade qualification makes it the preferred choice for safety-critical body and chassis ECUs.
When designing with this part, ensure the gate driver can source/sink sufficient peak current for fast Qg transitions, and that the PCB layout provides enough copper area to dissipate the expected I²R losses at the operating duty cycle. Use Kelvin-source connections where possible to avoid dv/dt-induced turn-on of the high-side device in a half-bridge.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a one-stop view of the part for sourcing decisions.
直接替换替代料： IAUT300N08S5N012ATMA2 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUT300N08S5N012ATMA2 （相同外形与封装尺寸） ——差异在于 Package, Operating Temperature Range, Technology, MSL Level, Automotive Qualification.
快速对比工具——选择替代料号进行并排对比：
IAUT300N08S5N012
✅ 直接替换📋 参考替代料（不在目录中）
IPG20N06S4L14AATMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →ISC080N10NM6ATMA1
✅ 直接替换✓ 有现货
$1.05 / 个
查看数据手册 →BSC117N08NS5ATMA1
✅ 直接替换✓ 有现货
$0.46 / 个
查看数据手册 →BSC076N06NS3GATMA1
✅ 直接替换✓ 有现货
$0.65 / 个
查看数据手册 →IAUC100N10S5N040ATMA1
✅ 直接替换✓ 有现货
$1.62 / 个
查看数据手册 →IAUT300N08S5N012ATMA2 最大额定值与电气特性
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V |
| 晶体管类型 | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | 375 W |
| Gate-to-Source Voltage (VGS) | ±20 V |
| 工作温度范围 | -55 °C to +175 °C (TJ) |
| 封装 | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| 安装类型 | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Compliant |
IAUT300N08S5N012ATMA2 引脚配置
| 引脚 1 | Source (S) — Power source terminal, internally connected to pins 2-3, 5-7, and the source pad |
| 引脚 2 | Source (S) — Power source terminal |
| 引脚 3 | Source (S) — Power source terminal |
| 引脚 4 | Gate (G) — Gate drive input; 10 V VGS typical for full enhancement |
| 引脚 5 | Source (S) — Power source terminal |
| 引脚 6 | Source (S) — Power source terminal |
| 引脚 7 | Source (S) — Power source terminal |
| 引脚 8 | Kelvin Source (KS) — Kelvin source sense pin for gate-driver ground reference, eliminating source-inductance feedback |
安全工作区 (SOA) - DC
典型应用
IAUT300N08S5N012ATMA2 适用于 6 应用s: 12 V / 48 V Automotive Load Switch, Electric Power Steering (EPS) Inverter Stage, 48 V Mild-Hybrid DC-DC Converter (Synchronous Rectifier), Battery Disconnect / Pyrofuse Bypass Switch, Industrial High-Current Motor Drive, Automotive Braking System (Electro-Mechanical Brake).
12 V / 48 V Automotive Load Switch
The IAUT300N08S5N012ATMA2 is well-suited for high-current 12 V/48 V automotive load switches in body and chassis ECUs, where its 300 A continuous drain rating and 1.2 mΩ RDS(on) at 10 V VGS minimize conduction loss when energizing high-power loads such as PTC heaters, e-chassis pumps, and 48 V e-turbo actuators. Placed between the battery bus and the load, the device gates with a standard 10 V gate drive from an automotive gate-driver IC; the ultra-low on-resistance drops only ~360 mV at 300 A, keeping dissipation under 108 W and well within the 375 W PD rating. AEC-Q101 qualification and 175 °C TJ max ensure reliability under hood and chassis thermal stress.
推荐
Electric Power Steering (EPS) Inverter Stage
In an EPS inverter, the IAUT300N08S5N012ATMA2 acts as the synchronous-rectifier or brake chopper switch in a three-phase bridge driving the steering motor, leveraging its 300 A continuous current capability to handle peak torque demands during parking maneuvers and high-speed lane changes. The 80 V VDS provides margin above the 12 V bus plus back-EMF transients from motor regeneration, while the 1.2 mΩ RDS(on) reduces thermal stress and extends ECU lifetime in safety-critical steering. The AEC-Q101 qualification is mandatory for chassis-domain electronics where functional-safety ISO 26262 ASIL-D applies.
推荐
48 V Mild-Hybrid DC-DC Converter (Synchronous Rectifier)
The IAUT300N08S5N012ATMA2 functions as the low-side synchronous-rectifier MOSFET in a 48 V buck or boost DC-DC converter for mild-hybrid vehicles, where its 80 V rating gives sufficient headroom above the 36-58 V operating range and its 1.2 mΩ RDS(on) cuts conduction loss in half compared to typical 100 V parts. Operating at switching frequencies from 100 kHz to 1 MHz, the device's optimized gate charge (Qg) minimizes switching loss and keeps converter efficiency above 96 percent. PG-HSOF-8-1 packaging enables top-side cooling via the exposed drain tab bolted to a cold plate, critical for underhood 48 V converters.
推荐
Battery Disconnect / Pyrofuse Bypass Switch
In battery management systems (BMS), the IAUT300N08S5N012ATMA2 serves as a solid-state battery disconnect switch or pyrofuse-bypass path, where its 300 A continuous current rating handles peak charge/discharge currents of 48 V lithium-ion packs in mild-hybrid and BEV architectures. The 1.2 mΩ RDS(on) keeps voltage drop during cranking events below 0.4 V at 300 A, preserving usable pack energy at low state-of-charge. AEC-Q101 and the wide -55 °C to +175 °C TJ range ensure operation across cold-start and high-temperature underhood environments.
推荐
Industrial High-Current Motor Drive
Beyond automotive, the IAUT300N08S5N012ATMA2 also fits industrial high-current motor drives up to 80 V bus, such as AGV traction controllers, robotic arm servo amplifiers, and forklift pump inverters, where its 300 A continuous rating supports 5-15 kW peak power levels. The 80 V VDS rating is sufficient for 48 V industrial battery packs with inductive kickback margin. Designers must observe thermal derating in industrial enclosures that lack active liquid cooling; PG-HSOF-8-1's exposed drain tab accepts a bolted heatsink or direct chassis mounting for sustained high-current operation.
推荐
Automotive Braking System (Electro-Mechanical Brake)
The IAUT300N08S5N012ATMA2 is used in electro-mechanical brake (EMB) and brake-by-wire systems as a high-current switch for the actuator H-bridge, where its AEC-Q101 automotive qualification and 1.2 mΩ RDS(on) ensure the safety-critical brake actuator receives full current without thermal runaway. The 80 V VDS rating handles inductive flyback from the brake motor windings when PWM chopping at 20 kHz. Functional-safety redundancy requires dual-MOSFET per switch position; the HSOF-8-1 footprint makes it easy to parallel two devices for 600 A combined capability while sharing a common heatsink.
推荐
推荐产品汇总
工程参考数据： IAUT300N08S5N012ATMA2 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUT300N08S5N012 | IPG20N06S4L14AATMA1 | ISC080N10NM6ATMA1 | BSC117N08NS5ATMA1 | BSC076N06NS3GATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-HSOF-8-1 | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same |
| Drain-to-Source Voltage (VDS) | 80 V | 80 V | 60 V | 100 V | 80 V | 60 V | 100 V |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Family | OptiMOS™-5 80 V | OptiMOS™-5 80 V | OptiMOS™ 60 V | OptiMOS™-6 100 V | OptiMOS™-5 80 V | OptiMOS™-3 60 V | OptiMOS™-5 100 V |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
关键差异点
- 300 A continuous drain current in PG-HSOF-8-1 - among the highest in 80 V class （对比 BSC117N08NS5ATMA1)
- Ultra-low 1.2 mΩ RDS(on) at 10 V VGS （对比 IAUC100N10S5N040ATMA1)
- OptiMOS™-5 80 V technology with AEC-Q101 automotive qualification （对比 BSC076N06NS3GATMA1)
设计说明
Estimated: at 300 A continuous drain current with RDS(on) = 1.2 mΩ, conduction loss is approximately I² × R = 300² × 0.0012 = 108 W. With a junction-to-case thermal resistance of approximately 0.4 °C/W (typical for PG-HSOF-8-1), the junction-to-case temperature rise alone is 108 × 0.4 = 43 °C above the case. Designers must mount the exposed drain tab to a PCB copper pour of at least 100 cm² (1 oz copper) or a bolted cold plate to keep the junction under the 175 °C maximum. Active airflow or liquid cooling is recommended for continuous 300 A operation.
Use the Kelvin-source pin (pin 8) as the gate-driver ground reference, not the power-source pins (1-3, 5-7). This eliminates the source-inductance L×dI/dt voltage spike from feeding back into the gate-drive loop, which can cause dv/dt-induced turn-on of the high-side device in a half-bridge. Place the gate-driver within 10 mm of pins 4 and 8, and route the gate trace as a 0.5 mm wide microstrip with adjacent ground return to minimize gate-loop inductance below 5 nH.
The PG-HSOF-8-1 exposed drain tab must be soldered to a continuous PCB copper land of at least 8 mm × 8 mm with thermal vias (0.3 mm drill, 1 mm pitch, plated) connecting to inner-layer copper planes. Without thermal vias, the junction-to-ambient thermal resistance rises from ~25 °C/W to over 60 °C/W, potentially causing thermal shutdown at 200 A continuous. Avoid splitting the drain copper pour - a single contiguous land prevents current crowding and hot spots under high di/dt switching.
Do not exceed the VGS = ±20 V absolute maximum gate-source voltage rating; even brief transients above 20 V can rupture the gate oxide and permanently damage the device. Use a gate-drive clamp Zener or TVS diode to protect against gate-drive supply overshoot. Also, never operate the device in linear mode (with VDS partially on) without confirming the SOA curve allows it - even brief operation outside the DC SOA can cause thermal runaway and device failure.
合规信息
AEC-Q101 automotive qualified per Infineon datasheet. RoHS and REACH compliant per Infineon product page. Halogen-free status not explicitly stated in the verified web data; refer to the Infineon material declaration for confirmation.
