IAUZ20N08S5L300ATMA1 vs IAUC28N08S5L230ATMA1 对比

详细并排对比 IAUZ20N08S5L300ATMA1 出自 Infineon 和 IAUC28N08S5L230ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 ✓ 量产中

规格对比

参数 IAUZ20N08S5L300ATMA1 IAUC28N08S5L230ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.81 $0.71
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 —
Polarity N-Channel —
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) 20 A (Tc) —
Power Dissipation (Pd) 30 W (Tc) —
On-State Resistance (Rds(on)) 30 mΩ @ 10 A, 10 V —
Gate Threshold Voltage (Vgs(th)) ±20 V (max Vgs rating) —
Input Capacitance (Ciss) 599 pF @ 40 V —
Total Gate Charge (Qg) 10.5 nC @ 10 V —
工作结温 -55°C to +175°C -55 °C to +175 °C
封装 PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm PG-TDSON-8-33 (5x6 mm SSO8)
安装类型 Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) —
Technology Trench MOSFET (OptiMOS-5) OptiMOS-5 Power MOSFET
RoHS 状态 Compliant Compliant
Series — OptiMOS-5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
Automotive Qualified — Yes (AEC-Q101)
MSL 等级 — [DATA_NEEDED: MSL rating]

数据手册与资源

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