IAUZ40N06S5L050ATMA1 vs IAUZ30N10S5L240ATMA1 对比

详细并排对比 IAUZ40N06S5L050ATMA1 出自 Infineon 和 IAUZ30N10S5L240ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZ40N06S5L050ATMA1 IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5L050ATMA1 - 60V 90A 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5L050ATMA1 ✓ 量产中
Infineon
IAUZ30N10S5L240ATMA1 IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N10S5L240ATMA1 ✓ 量产中

规格对比

参数 IAUZ40N06S5L050ATMA1 IAUZ30N10S5L240ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.71 $0.86
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
工作结温 -55 °C to +175 °C —
封装 PG-TSDSON-8-33 (TSDSON-8) PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad)
安装类型 Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) OptiMOS 5 (trench)
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
RoHS 状态 Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
R_DS(on) max at V_GS=10V — 24 mΩ
Gate-Source Voltage (V_GS) max — ±20 V
Gate Charge (Q_g) typ — 14 nC at V_GS=10V
Input Capacitance (C_iss) typ — 832 pF at V_DS=50V
Power Dissipation (P_D, Tc) — 45.5 W
工作温度范围 — -55°C to +175°C (junction, automotive grade)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

数据手册与资源

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