IAUZ40N06S5L050ATMA1 vs IAUZ30N10S5L240ATMA1 Comparison

Detailed side-by-side comparison of IAUZ40N06S5L050ATMA1 by Infineon and IAUZ30N10S5L240ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUZ40N06S5L050ATMA1 IAUZ30N10S5L240ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TSDSON-8-33 (TSDSON-8) PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) OptiMOS 5 (trench)
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
RoHS Status Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
R_DS(on) max at V_GS=10V — 24 mΩ
Gate-Source Voltage (V_GS) max — ±20 V
Gate Charge (Q_g) typ — 14 nC at V_GS=10V
Input Capacitance (C_iss) typ — 832 pF at V_DS=50V
Power Dissipation (P_D, Tc) — 45.5 W
Operating Temperature Range — -55°C to +175°C (junction, automotive grade)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

Datasheets & Resources

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