IAUZN04S7L025ATMA1 vs IAUCN04S7L042GATMA1 对比

详细并排对比 IAUZN04S7L025ATMA1 出自 Infineon 和 IAUCN04S7L042GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon

IAUZN04S7L025ATMA1 - 40V 117A 2.56mΩ OptiMOS 7 MOSFET | Infineon

IAUZN04S7L025ATMA1 ✓ 量产中

规格对比

参数 IAUZN04S7L025ATMA1 IAUCN04S7L042GATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.89 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 OptiMOS 7 40V
Technology N-Channel Trench MOSFET Trench N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 65 W —
工作结温 -55C to +175C —
封装 PG-TSDSON-8-44 (S3O8) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
安装类型 Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] 1
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
工作温度范围 — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
RoHS 状态 — Compliant
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

数据手册与资源

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