IAUZN04S7L025ATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IAUZN04S7L025ATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZN04S7L025ATMA1
IAUZN04S7L025ATMA1 - 40V 117A 2.56mΞ© OptiMOS 7 MOSFET | Infineon
IAUZN04S7L025ATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IAUZN04S7L025ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-7 | OptiMOS 7 40V |
| Technology | N-Channel Trench MOSFET | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum] | β |
| Continuous Drain Current (ID) at TC=25C | 117 A | β |
| Continuous Drain Current (ID) at TA | 60 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM value] | β |
| RDS(on) Max at VGS=10V | 2.56 mΞ© | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Power Dissipation (PD) at TC=25C | 65 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TSDSON-8-44 (S3O8) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| AEC-Q100 Qualification | Qualified (automotive grade) | β |
| RoHS Compliance | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Typical Applications | Synchronous rectification, hot-swap, OR-ing, motor drive | β |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| RoHS Status | β | Compliant |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |