IAUZN04S7L030ATMA1 vs IAUCN04S7N006ATMA1 对比

详细并排对比 IAUZN04S7L030ATMA1 出自 Infineon 和 IAUCN04S7N006ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUZN04S7L030ATMA1 IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 - 40V 3.05mΩ OptiMOS 7 N-MOSFET | Infineon

IAUZN04S7L030ATMA1 ✓ 量产中
Infineon
IAUCN04S7N006ATMA1 IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon

IAUCN04S7N006ATMA1 ✓ 量产中

规格对比

参数 IAUZN04S7L030ATMA1 IAUCN04S7N006ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.36 $0.95
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25°C) 60 A —
Pulsed Drain Current (IDM, Tj) 100 A —
On-State Resistance (RDS(on), VGS=10V max) 3.05 mΩ —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD, Tc=25°C) 58 W —
Operating Junction Temperature (Tj) -55C to +175C —
Technology Family OptiMOS-7 —
Channel Type N-Channel —
封装 PG-TSDSON-8-44 (S3O8) 3x3 mm² PG-TDSON-8-43
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (Automotive OptiMOS) AEC-Q101
RoHS Compliance Compliant —
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
FET Type — N-Channel
Continuous Drain Current (ID) — 175 A
On-State Resistance (RDS(on)) — 0.63 mOhm (typ at VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Technology — OptiMOS 5 (trench)
工作温度范围 — -55 C to +175 C
Junction Temperature Max — 175 C
Power Dissipation Max (Pd) — [DATA_NEEDED: Pd max]
Gate Charge Total (Qg) — [DATA_NEEDED: Qg total]
Lead-Free / RoHS — Yes (compliant)

数据手册与资源

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