IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
料号： IAUCN04S7N006ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $1.91 | $1.91 |
| 10 | $1.78 | $17.80 |
| 100 | $1.52 | $152.00 |
| 500 | $1.31 | $655.00 |
| 1,000 | $1.12 | $1,120.00 |
| 5,000 | $0.95 | $4,750.00 |
IAUCN04S7N006ATMA1 概述
A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between drain and source terminals by applying a gate-source voltage. N-channel MOSFETs such as the IAUCN04S7N006ATMA1 sit in the broader taxonomy of discrete semiconductors (transistor -> FET -> MOSFET -> power MOSFET -> automotive-qualified MOSFET). OptiMOS 5 is Infineon's fifth-generation trench-technology platform, designed to minimize conduction and switching losses in 40 V and 60 V applications such as 12 V automotive electrical systems, where the bus voltage is nominally 12 V but can transiently reach 35-40 V during load dump.
Key features of the IAUCN04S7N006ATMA1 include its 0.63 mOhm maximum RDS(on) at VGS = 10 V, low gate charge for fast switching transitions, integrated ESD protection, and 100% avalanche-tested reliability. The PG-TDSON-8-43 package provides an extremely low thermal resistance path through the exposed drain pad, which doubles as the electrical drain connection and the primary heatsinking surface.
Technically, the OptiMOS 5 process achieves its low on-resistance through a charge-balanced trench cell design that maximizes channel width per unit silicon area while keeping gate-drain charge (Qgd) and output charge (Qoss) low. This balance yields both low conduction loss and low switching loss, critical for high-frequency BLDC motor drives and synchronous rectification in DC-DC converters.
Typical applications include automotive BLDC motor drives (EPS, water pumps, oil pumps, fans), 12 V and 24 V synchronous rectification, battery management load switching, e-fuse circuits, and high-current DC-DC converter power stages. The wide safety margin between 40 V rating and 12 V automotive bus makes it robust against ISO 7637-2 transient pulses.
When designing with this part, place it on a copper PCB pad sized to spread heat from the exposed drain. Keep the gate drive loop area minimal to control switching loss, and use a TVS or snubber if inductive loads can push drain voltage above 40 V during turn-off.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers and procurement specialists a single decision-ready reference.
直接替换替代料： IAUCN04S7N006ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： IAUCN04S7N006ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Operating Temperature Range, MSL Level, Series.
快速对比工具——选择替代料号进行并排对比：
IAUCN04S7N009ATMA1
✅ 直接替换✓ 有现货
$1.55 / 个
查看数据手册 →IAUCN04S6N009TATMA1
✅ 直接替换✓ 有现货
$1.71 / 个
查看数据手册 →IAUC100N04S6L020ATMA1
✅ 直接替换✓ 有现货
$0.86 / 个
查看数据手册 →IAUZN04S7L030ATMA1
✅ 直接替换✓ 有现货
$0.36 / 个
查看数据手册 →VBQA1401
✅ 直接替换📋 参考替代料（不在目录中）
IAUCN04S7N006ATMA1 最大额定值与电气特性
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 175 A |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) |
| Technology | OptiMOS 5 (trench) |
| 封装 | PG-TDSON-8-43 |
| 安装类型 | Surface Mount |
| 工作温度范围 | -55 C to +175 C |
| Junction Temperature Max | 175 C |
| Automotive Qualification | AEC-Q101 |
| Lead-Free / RoHS | Yes (compliant) |
IAUCN04S7N006ATMA1 引脚配置
| 引脚 1 | Source — Source terminal (low-side return) |
| 引脚 2 | Source — Source terminal |
| 引脚 3 | Source — Source terminal |
| 引脚 4 | Gate — Gate drive input |
| 引脚 5 | Source — Source terminal |
| 引脚 6 | Source — Source terminal |
| 引脚 7 | Source — Source terminal |
| 引脚 8 | Source — Source terminal |
| 引脚 9 | Drain (Exposed Pad) — Drain terminal and thermal pad - solder to PCB copper |
安全工作区 (DC)
典型应用
IAUCN04S7N006ATMA1 适用于 6 应用s: Automotive BLDC Motor Drive, 12 V Synchronous Rectification, Battery Management Load Switch (E-Fuse), High-Current USB-C / USB-PD Power Switch, Industrial 24 V / 36 V DC-DC Converter, Robotics and Drone Power Distribution.
Automotive BLDC Motor Drive
The IAUCN04S7N006ATMA1 is purpose-built for 12 V automotive BLDC motor drives such as electric power steering (EPS), water pumps, oil pumps, and cooling fans. Its 175 A continuous drain current and 0.63 mOhm RDS(on) keep conduction losses to a minimum at high phase currents, while the AEC-Q101 qualification ensures reliable operation under automotive thermal and vibration stress. In a typical three-phase inverter, three half-bridges using this MOSFET switch at 20-50 kHz PWM with low switching loss thanks to the OptiMOS 5 cell design. The PG-TDSON-8-43 package exposes the drain pad for direct PCB heatsinking, eliminating the need for an external heatsink in most under-hood BLDC modules.
推荐
12 V Synchronous Rectification
Used as the low-side or high-side synchronous rectifier in 12 V buck or boost DC-DC converters, the IAUCN04S7N006ATMA1 replaces a Schottky diode to cut conduction loss by more than half. With 0.63 mOhm RDS(on) at 10 V VGS, a 50 A synchronous stage dissipates roughly 1.6 W per FET versus 25 W for a comparable Schottky, dramatically improving converter efficiency and reducing heatsink requirements. The OptiMOS 5 cell design keeps Qg and Qoss low, allowing switching frequencies of 200-500 kHz without penalty. The PG-TDSON-8-43 exposed-pad footprint handles the continuous thermal load on a properly sized copper pour.
推荐
Battery Management Load Switch (E-Fuse)
The IAUCN04S7N006ATMA1 functions as the main disconnect switch in 12 V automotive e-fuse and battery management modules, where it must carry full-load current (often 100-150 A) and interrupt fault currents within microseconds. Its 175 A continuous current rating, low RDS(on), and AEC-Q101 qualification make it ideal for replacing mechanical contactors or fuses with a solid-state solution that can be reset via the BMS. The MOSFET is driven by an isolated gate driver and current-sense amplifier that triggers turn-off on overcurrent. The wide 40 V VDS rating provides comfortable margin against load-dump transients on the 12 V bus.
推荐
High-Current USB-C / USB-PD Power Switch
In automotive USB-C charging ports delivering up to 100 W (20 V / 5 A) via USB-PD, the IAUCN04S7N006ATMA1 acts as the high-side load switch protecting the downstream cable and device from overcurrent. The 40 V VDS comfortably handles the 20 V PD bus plus inductive transients, while 0.63 mOhm RDS(on) keeps the on-state voltage drop under 50 mV even at 80 A, preserving efficiency. AEC-Q101 ensures the port survives the underhood thermal environment, and the small PG-TDSON-8-43 footprint enables compact multi-port hub designs.
推荐
Industrial 24 V / 36 V DC-DC Converter
Although rated for 40 V, the IAUCN04S7N006ATMA1 is sometimes deployed in industrial 24 V and 36 V DC-DC converters where the bus is regulated and never transients above the 40 V VDS limit. Its low RDS(on) and high current capability suit high-power-density telecom and server point-of-load converters. The wide SOA and 175 C maximum junction temperature give designers headroom during fault conditions. The PG-TDSON-8-43 footprint simplifies board layout, and the device's popularity in the automotive market guarantees multi-source availability for long-lifecycle industrial designs.
推荐
Robotics and Drone Power Distribution
In robotics, drones, and other high-performance battery-powered platforms running on 6S-12S Li-Po (up to 50.4 V fully charged), the IAUCN04S7N006ATMA1 is used as a power-path switch in buck regulators that step battery voltage down to 5 V or 12 V for motors and controllers. Its very low RDS(on) preserves battery runtime, and the small surface-mount PG-TDSON-8-43 package is a strong fit for weight-sensitive UAV and small-robot designs. Designers must add a pre-regulator or TVS clamp to keep VDS within 40 V during regenerative braking events where motor energy backfeeds the bus.
推荐
推荐产品汇总
工程参考数据： IAUCN04S7N006ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IAUCN04S7N009ATMA1 | IAUCN04S6N009TATMA1 | IAUC100N04S6L020ATMA1 | IAUZN04S7L030ATMA1 | VBQA1401 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| On-State Resistance (RDS(on)) | 0.63 mOhm @ VGS=10V | ~0.9 mOhm | ~0.9 mOhm (older gen) | ~2.0 mOhm | ~0.78 mOhm | ~0.78 mOhm |
| Technology Generation | OptiMOS 5 (S7) | OptiMOS 5 (S7) | OptiMOS 4 (S6) | OptiMOS 4 (S6) | OptiMOS 5 (S7) | Chinese design (VBsemi) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 (claimed) |
关键差异点
- Lowest RDS(on) in the 40 V OptiMOS family （对比 IAUZN04S7L030ATMA1)
- Newer-generation OptiMOS 5 process （对比 IAUCN04S6N009TATMA1)
- Cross-brand supply chain diversification option （对比 VBQA1401 (VBsemi))
设计说明
Estimated: At continuous drain current of 100 A with VGS = 10 V, conduction loss is roughly P = ID^2 x RDS(on) = 100^2 x 0.00063 = 6.3 W. The PG-TDSON-8-43 package has a typical theta_JA of ~50 C/W on a 1 oz 1-square-inch copper pour, producing a junction temperature rise of about 315 C - clearly above the 175 C maximum. To stay within the 175 C limit at 100 A continuous, the copper pad must be at least 4-6 square inches or augmented with an external heatsink; otherwise limit continuous current to ~50 A.
The drain-up PG-TDSON-8-43 footprint requires a substantial copper pour on the top layer connected to the exposed pad to spread heat. Use multiple thermal vias (0.3 mm drill, 0.5 mm pad, 1.0 mm pitch) under the exposed pad to push heat into the bottom or inner copper layers. Keep the source-return copper unbroken from the package to the gate driver's ground Kelvin pin to avoid source-inductance-induced gate-overshoot during fast switching transitions.
Do not exceed the 40 V VDS rating under any transient condition; automotive 12 V systems can produce load-dump pulses exceeding 35 V per ISO 7637-2, leaving only a 5 V safety margin. Always add a TVS diode (such as a 33 V SMBJ) or RC snubber across drain-source when driving inductive loads like motors or solenoids. Also, verify that the gate-drive voltage reaches at least 10 V for full RDS(on) - a 5 V logic-level drive will leave the MOSFET in its linear region and dramatically increase loss.
Minimize the gate-drive loop by placing the gate driver IC within 5-10 mm of the gate pin, and use a 10-22 ohm gate resistor to damp parasitic ringing. Keep the power loop (drain-source) compact and avoid narrow traces that add inductance. For high-current designs (>50 A continuous), use multiple PCB layers in parallel for the drain tab and source return rather than relying on a single 2 oz layer.
合规信息
AEC-Q101-qualified automotive MOSFET per Infineon product page. RoHS and lead-free confirmed via DigiKey product listing (PG-TDSON-8-43 package). Halogen-free status not explicitly listed in verified data.
